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december 2010 doc id 16818 rev 2 1/13 13 STGW50HF60SD 60 a, 600 v, very low drop igbt with soft and fast recovery diode features very low on-state voltage drop low switching off high current capability very soft ultra fast recovery antiparallel diode application pv inverter ups description STGW50HF60SD is a very low drop igbt based on new advanced planar technology, showing extremely low on-state volt age and limited turn-off losses. the overall performance makes this igbt ideal in low frequency switches of mixed frequency topologies for pf 1. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STGW50HF60SD gw50hf60sd to-247 tube www.st.com
electrical ratings STGW50HF60SD 2/13 doc id 16818 rev 2 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 110 a i c (1) continuous collector current at t c = 100 c 60 a i cl (2) 2. vclamp = 80% of v ces , t j =150 c, r g =10 , v ge =15 v turn-off latching current 60 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 130 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 284 w i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 120 a t j operating junction temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 0.44 c/w r thj-case thermal resistance junction-case diode 1.25 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
STGW50HF60SD electrical characteristics doc id 16818 rev 2 3/13 2 electrical characteristics (t j =25c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j =125 c 1.15 1.05 1.45 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.5 5.7 v i ces collector cut-off current (v ge = 0) v ce =600 v v ce =600 v, t j =125 c 50 500 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 30 a 25 s table 5. dynamic symbol parameter test cond itions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge =0 - 4300 400 100 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 30 a,v ge =15 v - 200 27 90 - nc nc nc
electrical characteristics STGW50HF60SD 4/13 doc id 16818 rev 2 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 15) - 50 20 1280 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 15) - 47 22 1100 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 15) - 370 220 465 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 15) - 700 250 800 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 15 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as exter nal diode. igbts and diode are at the same temperature (25c and 125c). 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 15) - 0.25 4.2 4.45 - mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 400 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 15) - 0.45 7.8 8.25 - mj mj mj table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t j = 125 c - 2.8 1.8 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, di/dt = 100 a/s (see figure 18) - 67 140 4 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a, v r = 50 v, t j = 125 c, di/dt = 100 a/s (see figure 18) - 103 390 7 - ns nc a
STGW50HF60SD electrical characteristics doc id 16818 rev 2 5/13 2.1 electrical characterist ics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. collector-emitter on voltage vs temperature figure 5. collector-emitter on voltage vs collector current figure 6. breakdown voltage vs temperature figure 7. gate threshold voltage vs temperature i c 60 40 20 0 0 2 v ce (v) (a) 1 3 8 0 100 v ge =15v 120 v ge =11v v ge =10v v ge = 8 v am0922v1 i c 60 40 20 0 0 4 v ge (v) 8 (a) 2 6 10 8 0 100 120 v ce =10v am09222v1 v ce( sa t) 1.1 1.0 0.9 0. 8 -50 50 t j (c) (v) 0 100 1.2 i c =60a 1. 3 1.4 1.5 i c = 3 0a i c =15a v ge =15v am0 88 77v1 v ce( sa t) 1.1 0.9 0.7 0.5 0 40 i c (a) (v) 20 60 1. 3 t j =25c t j =125c t j =-50c 8 0 1.5 1.7 v ge =15v am0 88 7 8 v1 v (br)ce s -50 0 t j (c) (v) 50 100 0.90 0.95 1.00 1.05 1.10 i c = 1 ma am0 88 79v1 v ge(th) 0.9 0. 8 0.7 0.6 -50 0 t j (c) (norm) 1.0 50 100 1.1 v ge =v ce i c =250 a am0 888 0v1
electrical characteristics STGW50HF60SD 6/13 doc id 16818 rev 2 figure 8. gate charge vs gate-emitter voltage figure 9. capacitance variations figure 10. switching losses vs collector current figure 11. switching losses vs gate resistance figure 12. switching losses vs temperature figure 13. turn-off soa v ge 12 8 4 0 0 40 q g (nc) (v) 160 16 8 0 120 v cc =4 8 0v i c = 3 0a 200 am0 888 1v1 c 1000 100 10 0.1 10 v ce (v) (pf) 1 100 cie s coe s cre s f=1mhz v ge =0 am0 888 2v1 e 100 5 15 i c (a) ( j) 10 20 1000 e on e off 25 v cc =400v, r g =10 v ge =15v, t j =125c am0 8883 v1 e 100 0 40 r g ( ) ( j) 20 60 1000 e on e off 8 0 v cc =400v, i c = 3 0a v ge =15v, t j =125c am0 888 4v1 e 100 25 75 t j (c) ( j) 50 100 1000 e on e off v cc =400v, i c = 3 0a v ge =15v, r g =10 am0 888 5v1 i c 10 1 0.1 0.01 0.1 1 100 v ce (v) 10 (a) r g =10 v ge =15v t j =150c am0 888 6v1
STGW50HF60SD electrical characteristics doc id 16818 rev 2 7/13 figure 14. emitter-collector diode characteristics i f 3 0 20 10 0 0 2 v f (v) (a) 1 3 t j =25c 4 typic a l v a l u e s typic a l v a l u e s t j =125c t j =125c m a xim u m v a l u e s am0 888 7v1
test circuits STGW50HF60SD 8/13 doc id 16818 rev 2 3 test circuits figure 15. test circuit for inductive load switching figure 16. gate charge test circuit figure 17. switching waveform figure 18. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
STGW50HF60SD package mechanical data doc id 16818 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STGW50HF60SD 10/13 doc id 16818 rev 2 table 9. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
STGW50HF60SD package mechanical data doc id 16818 rev 2 11/13 figure 19. to-247 drawing 0075 3 25_f
revision history STGW50HF60SD 12/13 doc id 16818 rev 2 5 revision history table 10. document revision history date revision changes 15-jan-2010 1 initial release. 21-dec-2010 2 document status promoted to datasheet.
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